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- Introduction to Bipolar & Unipolar Transistors
- Construction of Uni Junction Transistor (UJT)
- Junction Field Effect Transistor (JFET)
- Construction of MOSFET
This transistor is similar to the BJT except it has only one junction. The schematic view of the UJT is given below –
As shown in above figure, the UJT is made up of an n-channel with a p-layer inserted into the channel nearer to base-2 than base-1.
Thus it has one PN junction with two internal resistances Rb1 and Rb2 such that Rb1 is the internal resistance between base-1 and emitter. And Rb2 is the internal resistance between base-2 and emitter. So it is clear that Rb1 >> Rb2 because emitter layer is nearer to base-2 than base-1.
The important parameter of the UJT is known as intrinsic standoff ratio as follows –
η = Rb1 / ( Rb1 + Rb2 )
